Growth of GaN on porous SiC by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
CUBIC GaN HETEROEPITAXY ON THIN-SiC-COVERED Si(001)
We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epit...
متن کاملGrowth of GaN on SiC(0001) by Molecular Beam Epitaxy
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...
متن کاملOptimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...
متن کاملStructural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6HSiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films ...
متن کاملLow temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxy
Related Articles Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 100, 262102 (2012) Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP J. Appl. Phys. 111, 123506 (2012) Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular bea...
متن کامل